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STP140NF75 STB140NF75 - STB140NF75-1
N-channel 75V - 0.0065 - 120A - D2PAK/I2/TO-220 STripFETTM III Power MOSFET
General features
Type STB140NF75 STB140NF75-1 STP140NF75 VDSS 75V 75V 75V RDS(on) <0.0075 <0.0075 <0.0075 ID 120A(1) 120A(1) 120A(1) TO-220
1 2 3
3 1
D2PAK
1. Current limited by package
100% avalanche tested
3 12
Description
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
I2PAK
Internal schematic diagram
Applications
Switching application
Order codes
Part number STB140NF75T4 STB140NF75-1 STP140NF75 Marking B140NF75 B140NF75 P140NF75 Package D I
2PAK 2PAK
Packaging Tape & reel Tube Tube
TO-220
June 2006
Rev 4
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www.st.com 18
Contents
STB140NF75 - STP140NF75-1 - STP140NF75
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ........................... 6
3 4 5 6 7
Spice thermal model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
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STB140NF75 - STP140NF75-1 - STP140NF75
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VDGR VGS ID(1) ID(1) IDM
(2)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 k) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating Factor Value 75 75 20 120 100 480 310 2.08 10 750 -55 to 175 Max. operating junction temperature Unit V V V A A A W W/C V/ns mJ C
Ptot
(3) (4)
dv/dt EAS
Peak diode recovery voltage slope Single pulse avalanche energy Storage temperature
Tstg Tj
1. Value limited by wire bonding 2. Pulse width limited by safe operating area. 3. ISD 120A, di/dt 400A/s, VDD V(BR)DSS, Tj TJMAX 4. Starting Tj = 25 C, ID = 60A, VDD = 30V
Table 2.
Rthj-case Rthj-amb TJ
Thermal data
Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose(1) 0.48 62.5 300 C/W C/W C
1. for 10 sec. 1.6mm from case
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Electrical characteristics
STB140NF75 - STP140NF75-1 - STP140NF75
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 3.
Symbol V(BR)DSS
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS =0 VDS = max ratings VDS = max ratings, TC = 125C VGS = 20V VDS = VGS, ID = 250A VGS = 10V, ID = 70A 2 0.0065 Min. 75 1 10 100 4 0.0075 Typ. Max. Unit V A A nA V
IDSS
IGSS VGS(th) RDS(on)
Table 4.
Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 15V, ID = 70A Min. Typ. 160 5000 960 310 30 140 130 90 160 28 70 218 Max. Unit S pF pF pF ns ns ns ns nC nC nC
VDS = 25V, f = 1MHz, VGS = 0
VDD = 38V, ID = 70A RG = 4.7 VGS = 10V (see Figure 19) VDD = 60V, ID = 120A, VGS = 10V (see Figure 20)
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
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STB140NF75 - STP140NF75-1 - STP140NF75
Electrical characteristics
Table 5.
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 120A, VGS = 0 115 450 8 Test conditions Min. Typ. Max. 120 480 1.5 Unit A A V ns nC A
ISD = 120A, Reverse recovery time di/dt = 100A/s, Reverse recovery charge VDD = 35V, Tj = 150C Reverse recovery current (see Figure 21)
1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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Electrical characteristics
STB140NF75 - STP140NF75-1 - STP140NF75
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
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STB140NF75 - STP140NF75-1 - STP140NF75 Figure 7. Gate charge vs gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain diode forward characteristics
Figure 12. Normalized BVDSS vs temperature
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Electrical characteristics Figure 13. Power derating vs Tc
STB140NF75 - STP140NF75-1 - STP140NF75 Figure 14. Max ID current vs Tc
c
Figure 15. Thermal resistance Rthj-a vs PCB copper area
Figure 16. Max power dissipation vs PCB copper area
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STB140NF75 - STP140NF75-1 - STP140NF75 Figure 17. Allowable lav vs time in avalanche
Electrical characteristics
The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions: PD(AVE) = 0.5 * (1.3 * BVDSS * IAV) EAS(AR) = PD(AVE) * tAV Where: IAV is the allowable current in avalanche PD(AVE) is the average power dissipation in avalanche (single pulse) tAV is the time in avalanche To derate above 25 C, at fixed IAV , the following equation must be applied: IAV = 2 * (Tjmax - TCASE)/ (1.3 * BVDSS * Zth) Where: Zth = K * Rth is the value coming from normalized thermal response at fixed pulse width equal to TAV .
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Spice thermal model
STB140NF75 - STP140NF75-1 - STP140NF75
3
Spice thermal model
Table 6. Parameters
Parameter CTHERM1 CTHERM2 CTHERM3 CTHERM4 CTHERM5 CTHERM6 Node 7-6 6-5 5-4 4-3 3-2 2-1 Value 1.49 * 10-3 3.50 * 10-2 5.94 * 10-2 9.74 * 10-2 8.86 * 10-2 8.27 * 10-1
RTHERM1 RTHERM2 RTHERM3 RTHERM4 RTHERM5 RTHERM6
7-6 6-5 5-4 4-3 3-2 2-1
0.0384 0.0624 0.072 0.0912 0.1008 0.1152
Figure 18. Scheme
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STB140NF75 - STP140NF75-1 - STP140NF75
Test circuit
4
Test circuit
Figure 20. Gate charge test circuit
Figure 19. Switching times test circuit for resistive load
Figure 21. Test circuit for inductive load Figure 22. Unclamped Inductive load test switching and diode recovery times circuit
Figure 23. Unclamped inductive waveform
Figure 24. Switching time waveform
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Package mechanical data
STB140NF75 - STP140NF75-1 - STP140NF75
5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STB140NF75 - STP140NF75-1 - STP140NF75
Package mechanical data
D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
3
1
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Package mechanical data
STB140NF75 - STP140NF75-1 - STP140NF75
TO-262 (I2PAK) MECHANICAL DATA
mm. DIM. MIN. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 TYP MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch
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STB140NF75 - STP140NF75-1 - STP140NF75
Package mechanical data
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
oP
Q
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Packaging mechanical data
STB140NF75 - STP140NF75-1 - STP140NF75
6
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
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STB140NF75 - STP140NF75-1 - STP140NF75
Revision history
7
Revision history
Table 7.
Date 21-Jun-2004 19-Jun-2006 28-Jun-2006
Revision history
Revision 2 3 4 Preliminary datasheet New template, content change Graphical updates, Figure 10 and Figure 13 Changes
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STB140NF75 - STP140NF75-1 - STP140NF75
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